ULTRA PRECISION FORCE AND POSITION SYNCHRONIZED CONTROL GRINDING MACHINE
NSF SERIES化合物半導体加工に強い「研削盤」はナガセインテグレックス。世界最高レベルの能率と精度でSiC・GaNの平坦化・薄化が可能な超精密研削盤／バックグラインダーNSFseries。
Unparalleled high efficiency and accuracy. There are reasons that NAGASE product are selected for flattening, thinning monocrystal SiC & GaN, and sapphire wafers as well as for minimizing the machining strained layer.
6-inch monocryistal SiC wafers are thinned from 600μm to 100μm.
Thinning of wafers to Ra1nm or less takes only about 10 minutes. Two or more 4-inch wafers can be processed simultaneously.
Fabrication of ultra-flat surface up to the edge is possible. This was not possible with the conventional lapping method used in the wafer process.
Processing with an accuracy of 0.6nmRa、5.1nmRz equivalent to lapping is possible.
Using an ultra high-grit grinding wheel also minimizes tool wear.
Minimized machining strained layer to the highest level, which was not possible with the conventional fixed abrasion grain method.
The CMP process in wafer making is dramatically reduced.
We excels at highly efficient and precise thinning and flattening of sapphire used for lighting devices.
Efficient and accurate processing of glass used for optical products or wafer support boards.
Flatness of less than 1μm is easily achieved.
Hard brittle materials, such as ceramics used as radiator plates and support boards, can be processed with superb accuracy and efficiency.
Soft and viscous materials such as pure nickel and copper plate used for MEMS can be easily processed with accuracy and efficiency.
Epoch-making grinding method for hard-to-cut materials developed from a joint study at Tohoku University.
The combination of originally developed Intelligent Wheel (patented) and motion copying & pressure copying compound control technology achieves unprecedented machining efficiency, quality and tool life, as well as minimal SSD.
The combination of an originally developed Intelligent Wheel and motion copying & pressure copying compound control technology allows unprecedented high machining efficiency, quality and long tool life.
This technology has been developed to minimize damage to workpieces. Pressure applied to the workpiece and grinding wheel is constantly communicated to NC-control the infeed pressure and amount compositely, thus achieving grinding under optimum conditions at all times.
Pressure applied to the workpiece and the grinding wheel is detected in real time for compound control of infeed pressure and amount by NC.
The grinding wheel and the work spindle bearings employ a non-contact and polyhedral constraint static guideway. In addition, double hydrostatic bearings have been developed and incorporated into the work spindle to achieve motion copying & pressure copying compound control grinding (patented). High vibration damping performance, super-precision rotation with no surface fluctuation, and accurate vertical axis positioning are all combined to enable the fabrication of unconventional ultra-mirror surfaces and flat surfaces.
The rigid bed and unique gantry frame structure minimize infeed by individual axis and inclination of the machining surface.
By optionally measuring the workpiece thickness with an accuracy of ±1μm, automatic machining is possible. In addition, compliance with automatic workpiece supply and the clean room is also available (for detailed specifications, please consult NAGASE head office sales personnel).
A precision chucking method can be suggested suited to wafer vacuuming, BG tape, and waxed surface plate as requested by the Customer.
Measurement unit for measuring workpiece thickness with accuracy of ±1μm to comply with fully automatic machining
A material handling unit can be installed for handling materials with an appropriate size & quantity and by a carrying method as requested by the Customer.
A system compliant with pure water and clean room can be recommended as requested by the Customer.
Various types of wafers of maximum 6 inches can be handled.
This model is most suited for line operation for machining SiC, GaN, sapphire, LT, etc.
Various types of wafers (4 inches x 3 or 3 inches x 7) can be machined simultaneously.
This model has a long track record of machining SiC, GaN, sapphire and LT.
Simultaneous machining of 3 wafers (6 inches) or 7 wafers (4 inches) is possible.
This model is compliant with machining of large-diameter ceramic or glass materials.
Automatic workpiece change is also possible.
| Machine/Items | Max. Work Diameter |
Vertical Axis Stroke |
Fluctuation Axis Stroke |
Work Spindle Min. Unit |
Work Spindle Rotation Speed |
Grinding Wheel Spindle Rotation Speed |
Wheel Size (OD x ID) |
|---|---|---|---|---|---|---|---|
| mm | mm | mm | mm | min-1 | min-1 | mm | |
| NSF-350 | ⌀150 | 150 | - | 0.0001 | 70-900 | 0-600 | ⌀350 x 30 |
| NSF-600 | ⌀300 | 150 | 100 | 0.0001 | 70-600 | 0-600 | ⌀600 x 30 |
| NSF-800 | ⌀380 | 約180 | - | 0.0001 | (70)-450 | 0〜450 | ⌀800 x 40 |
Customers who are thinking of introducing new facilities are welcome to ask us for test machining or visit our factory. Please feel free to consult us. Please inform us of facility conditions, size and material of machining workpieces, machining time, etc. in detail. Depending on the contents of your request, sales personnel in your district will make a proposal to meet your requirements.