Flattening and Mirror Surface Grinding of SiC Wafer, etc.
Grinding Example of Ultra Precision Grinding Machine 1
「化合物半導体加工」に強い超精密研削盤はナガセインテグレックス。超精密グラインダーNSFseriesによるSiC・GaNウェハなどの平坦化・平面研削、鏡面化、加工歪み層の極小化事例をご紹介。
Grinding Process from As-Sliced to Mirror Surface
Grinding Process That Changes SiC Wafer Manufacturing.
Flatness grinding (surface grinding) of SiC wafer refers to the creation of a flat surface on one or both sides of a wafer during the wafer fabrication (wafer making) process. SiC wafer in as-sliced condition are double-sided lapped, then single-sided ground, polished, and CMP for final finishing. However, this method requires a lot of processing time and cost. Nagase has developed a grinding process that achieves a flat surface and minimizes the machining strain layer (mirror machining) of SiC wafers once using only fixed abrasive grains.
Works
Fratness Grinding of SiC Power Semiconductor Substrate
Rate: About 70μm/min
Material: Single-crystal SiC wafer
Size: 4" x 3 sheets process
Machine: NSF-350
Fratness Grinding of SiC Wafer
TTV: 1μm, LTV: 0.8μm
Material: Single-crystal SiC wafer
Size: 4"
Machine: NSF-350
Mirror Grinding of SiC Wafer
Roughness: 0.61nmRa, 4.80nmRz
Material: Single-crystal SiC wafer
Size: 4" x 7 sheets process (6" x 3 sheets can also be processed)
Machine: NSF-350
Minimization of Processing Strain Layer (Damage) on SiC Wafer
SSD: Average Less than 50 nm
Measurement: Any point on Si surface
Ultra Thin Grinding of Aluminum Ceramics
Parallelism: 1μm
Rate: 50μm/min
Material: Aluminum ceramics
Size: 100 x 100 x 0.1mm
Machine: NSF-600
Ultra Efficient and Thin Flatness Prosess of Pure Nickel
Roughness: 0.69nmRa, 5.12nmRz
Rate: 75μm/min (rough process)
Material: Pure nickel
Size: 155 x 130mm
Machine: NSF-600
Ultra Mirror Surface Grinding of Optical Lens
Roughness: 0.69nmRa, 5.12nmRz
Material: Low thermal expansion glass
Size: ⌀200 x 25mm
Machine: NSF-600
Ultra Mirror Surface Grinding of Carbide
Roughness: 0.6nmRa, 3.9nmRz
Material: Carbide
Size: ⌀70mm
Machine: NSF-600
Inquiries
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